Accession Number : AD0775382

Title :   Microwave Field Effect Transistor Development.

Descriptive Note : Final technical rept.,

Corporate Author : GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY N Y

Personal Author(s) : Goronkin,Herbert

Report Date : JAN 1974

Pagination or Media Count : 80

Abstract : The purpose of the program was to fabricate a 10-watt F-Band field effect transistor. Two approaches were taken. The multiple mask approach was found to be cumbersome and generally difficult to execute for a 2.5 micron geometry device. Rather than pursue this approach, a second design was initiated which involved self-registration of the source and drain with respect to the gate by means of a selective epitaxial region which comprises the electrical channel. Due to several unanticipated process difficulties (for which solutions have been identified) time did not allow for completion of the fabrication portion of the FET-11 effort. Preliminary findings indicate that the approach is feasible and should be expected to yield microwave power field effect transistors. (Author)

Descriptors :   *Field effect transistors, Microwave equipment, Schottky barrier devices, Silicon, Fabrication, Junction transistors

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE