Accession Number : AD0775384
Title : Radiation Tolerance of GaAs Broadband Amplifier.
Descriptive Note : Final rept. 1 Apr-30 Sep 73,
Corporate Author : MCDONNELL DOUGLAS ASTRONAUTICS CO HUNTINGTON BEACH CALIF
Personal Author(s) : Zuleeg,Rainer ; Behle,Allen F.
Report Date : 31 OCT 1973
Pagination or Media Count : 42
Abstract : The response and degradation characteristics of microstripline GaAs junction field-effect transistor integrated microwave amplifiers were investigated in radiation environments. Permanent changes in electrical performance due to fluences of 5x 10 to the 14th power and 1x 10 to the 15th power neutrons/sq cm (E > 10 KeV) are reported and discussed. Experimental results are compared with theoretical predictions of device transconductance changes, which have been established and verified prior to this investigation. (Modified author abstract)
Descriptors : *Microwave amplifiers, *Radiation effects, Gallium arsenides, Field effect transistors, Neutrons, Ionizing radiation, Reliability(Electronics), Gamma rays
Subject Categories : Electrical and Electronic Equipment
Radioactiv, Radioactive Wastes & Fission Prod
Distribution Statement : APPROVED FOR PUBLIC RELEASE