Accession Number : AD0775895

Title :   Preparation and Properties of PbS-Si Heterojunctions for Infrared Charge Coupled Imaging.

Descriptive Note : Final rept. May 72-Nov 73,

Corporate Author : NAVAL ORDNANCE LAB WHITE OAK MD

Personal Author(s) : Lee,R. N. ; Scharnhorst,P. K. ; Schoolar,R. B.

Report Date : 07 JAN 1974

Pagination or Media Count : 24

Abstract : Narrow bandgap-silicon heterojunctions are examined theoretically and experimentally to assess the feasibility of extending charge coupled devices (CCD) imaging to the infrared. Ultra-high vacuum deposition of PbS on silicon is made using both direct sublimation and hot-wall film growth techniques. Substrate preparation in vacuum is discussed and the dependence of film properties on growth parameters is presented. Measurements of I-V, C-V and photoresponse characteristics of the PbS-Si heterojunctions are presented. (Author)

Descriptors :   *Infrared images, *Infrared optical systems, *Semiconductor devices, *Charge coupled devices, Infrared detectors, Semiconductor junctions, Infrared photoconductors, Silicon, Lead compounds, Sulfides

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE