Accession Number : AD0776012

Title :   Donor Impurity Surface States in Semiconductors.

Descriptive Note : Final rept. 1 Jun 71-31 Dec 73,

Corporate Author : MISSOURI UNIV ROLLA DEPT OF PHYSICS

Personal Author(s) : Hale,Edward B.

Report Date : FEB 1974

Pagination or Media Count : 17

Abstract : The goals of this research were to use ESR as a tool to elucidate on the nature and properties of donor surface states, and also to use ESR signals to determine details in semiconductor surface structure. Germanium doped with antimony was chosen as the most interesting donor-semiconductor system for study and a major effort was invested in this system. Another project involved ESR studies on the ion implanted surface layer in silicon. The purpose of this research was to investigate in detail the structural transformation from the crystalline to the amorphous state in the surface layer as a result of the ion implantation.

Descriptors :   *Semiconductors, *Electron paramagnetic resonance, Germanium, Doping, Silicon, Ion implantation, Surface properties

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE