Accession Number : AD0776029

Title :   Analysis of Silicide Formation,

Corporate Author : CALIFORNIA INST OF TECH PASADENA DIV OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Bower,Robert W. ; Chu,Wei-Kan ; Krautle,Herbert ; Mayer,James W. ; Nicolet,Marc-A.

Report Date : 15 OCT 1973

Pagination or Media Count : 75

Abstract : Contact formation in semiconductor integrated circuit technology involves deposition of one or more layers of metal 1000 to 10,000A thick on the surface of selected areas of Si. To form low resistance contacts, it is usually necessary to heat to temperatures between 400 and 600C. At these temperatures Si reacts with the metal film. The purpose of this study was to investigate these reactions. A review of silicide formation is included as an appendix. A survey of silicide formation for metal films deposited on Si indicates that the typical silicide that is formed is the phase that is most rich in Si. This is the end point one expects from thermodynamic equilibrium considerations. One recent observation is that metal rich silicides are formed when the metal layer is deposited on SiO2 rather than Si.

Descriptors :   *Silicides, *Integrated circuits, *Crystal structure, Thin films, Crystal growth, Ion bombardment, Backscattering, Metals, Silicon, Transition metals, Silicon dioxide, Titanium, Niobium, Vanadium, Reaction kinetics

Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE