Accession Number : AD0776171

Title :   Solar Elements Based on Epitaxial GaAs Films,

Corporate Author : ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA

Personal Author(s) : Kargin,M. B. ; Karoleva,N. S. ; Nuller,T. P.

Report Date : 03 JAN 1974

Pagination or Media Count : 6

Abstract : In recent years, the efforts of many investigators have been directed at the development of thin-film polycrystalline solar cells (s.c.), which, in comparison with monocrystalline s.c. have a better ratio of output to power-weight PV(W/kg) and a much lower cost. The authors obtained and investigated the principal characteristics of s.c. based on epitaxial films of gallium arsenide, which possess the maximum value for limiting efficiency for the solar spectrum and also are characterized by the best (in comparison with other materials) temperature relationships of its parameters.

Descriptors :   *Solar cells, *Semiconducting films, *Gallium arsenides, Thin films, Electrical properties, Photoelectric effect, Translations, USSR

Subject Categories : Electric Power Production and Distribution
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE