Accession Number : AD0776806
Title : Determinaton of Current vs. Electric Field Characteristics in Multivalley Semiconductors.
Descriptive Note : Interim technical rept. 1 Aug-1 Nov 73,
Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
Personal Author(s) : Sigman,E. H.
Report Date : 01 NOV 1973
Pagination or Media Count : 215
Abstract : A computer simulation of the dc transport characteristics for both isotropic and anisotropic semiconductors of any arbitrary band structure is developed. A distinct drifted Maxwell-Boltzmann distribution is used for each band. The zeroth, first and second moments of the Boltzmann equation are used to calculate the electron density, velocity and temperature in each of the conduction bands for an applied electric field of any arbitrary orientation. Acoustic phonon, optical phonon and polar optical phonon scattering are included in the analysis. A computer subroutine which calculates the collision integral due to phonon scattering by using numerical integration is developed and a solution scheme for the current vs. electric field characteristics which uses this subroutine is presented. The computer program is used to determine the current vs. electric field characteristics for n-Ge for given electric field orientations. (Modified author abstract)
Descriptors : *Semiconductors, Mathematical models, Microwave equipment, Electric fields, Electric current, Direct current, Electron density, Electron energy, Phonons, Boltzmann equation, Maxwells equations, Germanium, Gallium phosphides, Computer programs, FORTRAN
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE