Accession Number : AD0776913

Title :   Study of Transient Radiation Effects on a Monolithic Integrated Operational Amplifier Circuit.

Descriptive Note : Technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Schauer,H. ; Hudson,P.

Report Date : MAR 1974

Pagination or Media Count : 32

Abstract : The microAmp 776 micropower operational amplifier was irradiated in Cobalt-60, linear accelerator and fast burst reactor environments. The rest procedures used, the test results obtained, and an analysis of the radition induced failures are presented. Offset voltage increased 25% at 5600 rads (Si) Co60 exposure and up to 400% at 1 X 10 to the 5th power rads (Si) linac exposure. Open loop gain was degraded up to 70% at 6 X 10 to the 4th power rads (Si). Offset voltage approximately doubled at 4 X 10 to the 11th power n/cm (E > or = 10 keV), which is more significant at lower set currents where offset voltages are initially higher. Open loop gain decreased by up to 80% at 5 X 10 to the 11th power n/sq cm, largely due to decreased transistor current gain and partly due to a 30% reduction in quiescent current. (Author)

Descriptors :   *Power amplifiers, *Integrated circuits, *Transient radiation effects, Failure(Electronics), Neutron reactions, Gamma rays, Test methods

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE