Accession Number : AD0777054

Title :   GEISHA Semiconductor Reliability Studies. A Portion of CHAIR-GEISHA.

Descriptive Note : Final rept. 1 Feb 70-31 Dec 71,


Personal Author(s) : Szedon,John R. ; Yu,Karl K.

Report Date : 26 OCT 1973

Pagination or Media Count : 104

Abstract : The final report describes studies relating to silicon junction diodes to be used for amplifying the current in an electron beam via electron-hole pair production in silicon. Radiation damage effects on the junction reverse leakage are treated in terms of insulator charging effects. Electrical comparisons of shallow diffused and ion implanted junctions are given. Contributions to the thermal impedance of a device of the silicon, gold and beryllia component regions are assessed. Technology is described for producing targets with linear arrays of diodes from a monolithic string of elements formed in silicon. (Author)

Descriptors :   *Semiconductor diodes, *Electron tube targets, *Radiation effects, Silicon nitrides, Polymeric films, Electron irradiation, Degradation, Reliability(Electronics), Fabrication

Subject Categories : Electrical and Electronic Equipment
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE