Accession Number : AD0777586
Title : Quasi-Static Capacitance-Voltage Characteristics of MNOS Devices.
Descriptive Note : Master's thesis,
Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
Personal Author(s) : Trever,George W.
Report Date : DEC 1973
Pagination or Media Count : 106
Abstract : The quasi-static (low-frequency) capacitance-voltage (CV) characteristics of metal-nitride-oxide-semiconductor (MNOS) memory devices are shown to exhibit distinguishable properties associated with memory and nonmemory behavior. Quasi-static CV analysis procedures, as developed by Kuhn, are applied to the MNOS nonmemory characteristics and reveal that the silicon-oxide interface-state densities are 100 times larger than for comparable nonmemory capacitor structures. Substrate surface-potential functions are constructed to model ideal nonmemory CV behavior and are used to compare with memory CV characteristics. Calculations are performed to show that the switching behavior observed experimentally is consistent with the quasi-static CV memory characteristics and with the mathematical models. Also, nonequilibrium quasi-static effects observed for MNOS memory transistor structures and deviations in normal quasi-static CV behavior of MNOS nonmemory capacitor structures are reported. (Author)
Descriptors : *Memory devices, *Semiconductor devices, Metals, Nitrides, Oxides, Silicon, Transistors, Capacitance, Voltage, Capacitors, Charge transfer, Surface properties, Theses
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE