Accession Number : AD0777676

Title :   Fast Neutron Irradiation of PbS and InSb Infrared Detectors.

Descriptive Note : Memorandum rept.,


Personal Author(s) : Moore,W. J. ; Guenzer,C. S. ; Wilsey,N. D. ; Molnar,B.

Report Date : MAR 1974

Pagination or Media Count : 30

Abstract : The effects of fast neutron irradiations on lead sulfide and indium antimonide infrared detectors is reported. A threshold for lead sulfide detectors has been established at 2 x 10 to the 12th power n/sq cm with approximately 75% of the degradation attributable to a reduction in majority carrier lifetime. When stored at 300K, the detectors return to their original condition in tens to hundreds of days. Restoration of signal proceeds logarithmically with time rather than exponentially as is usually observed. For indium antimonide photovoltaic detectors, a threshold of 2 x 10 to the 11th power n/sq cm has been observed. Measurements show that neutron irradiations produce both an increase in noise and a decrease in signal. These effects result from a decrease in (1) the leakage resistance, (2) the effective carrier lifetime in the depletion region and (3) the hole diffusion length in the base region. (Author)

Descriptors :   *Infrared detectors, *Radiation effects, *Semiconductor devices, Fast neutrons, Lead sulfides, Indium antimonides, Photoconductivity, Vulnerability, Nuclear explosion damage

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE