Accession Number : AD0777967
Title : Vacuum UV Absorption Spectra Induced by Al(+) Ion Implantation in SiO2 Films on Sapphire.
Descriptive Note : Technical rept.,
Corporate Author : PRINCETON UNIV N J SOLID STATE AND MATERIALS LAB
Personal Author(s) : Russell,T. J. ; Pandolif,T. ; Royce,B. S. H.
Report Date : 22 APR 1974
Pagination or Media Count : 17
Abstract : Measurements are reported on the vacuum ultraviolet absorption spectra induced in SiO2 films by Al(+) ion implantation. Studies have been made of the thermal stability of the associated defects and their response to X-irradiation subsequent to partial annealing. The implantation has been found to introduce an absorption band at 6.2 eV in films derived from the thermal decomposition of silane and at 7.5 eV in a fully oxidized S.O.S. film. In addition to introducing these vacuum ultraviolet absorption bands the implantation moves the fundamental absorption edge to lower energies. This band edge shift 'anneals' in parallel to the disappearance of the absorption bands and X-irradiation after a partial annealing is found to cause it to move towards lower energies again. This behavior is discussed in terms of the oxide structure. (Author)
Descriptors : *Dielectric films, *Ion implantation, *Silicon dioxide, Semiconducting films, Insulation, Radiation effects, Ions, Aluminum, Absorption spectra, Band theory of solids, Integrated circuits, Thin films
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE