Accession Number : AD0777982
Title : Defect Creation in Semiconductors,
Corporate Author : STATE UNIV OF NEW YORK ALBANY DEPT OF PHYSICS
Personal Author(s) : Corbett,James W. ; Bourgoin,Jacques C.
Report Date : 1973
Pagination or Media Count : 355
Abstract : The bulk of the material deals with defects introduced by the interaction of energetic particles with the lattice, and the major portion of that deals with what is called displacement damage. Energetic particles interact with the lattice in two ways: (1) ionization of the lattice (and in most cases this is the dominant process); and, (2) direct collisions with the nucleus which result in a recoil energy being imparted to that nucleus (atom).
Descriptors : *Semiconductors, *Defects(Materials), *Radiation effects, Crystal lattices, Photon bombardment, Proton bombardment, Electron irradiation, Ion bombardment, Neutrons, Displacement, Ionization
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE