Accession Number : AD0778702
Title : Low Temperature Growth of Cubic Gallium Nitride.
Descriptive Note : Annual technical rept. Feb 73-Jan 74,
Corporate Author : NORTH CAROLINA STATE UNIV RALEIGH DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Littlejohn,M. A. ; Andrews,J. E.
Report Date : MAR 1974
Pagination or Media Count : 11
Abstract : The report describes progress made toward the synthesis of GaN thin films from chemical vapor deposition using the organometallic source triethylgallium monammine (Ga(C2H5)3.NH3). Work is reported on reflection electron diffraction and transmission electron diffraction measurements, along with preliminary scanning electron microscopy results. Problems related to oxygen contamination are discussed and their influence on Hall effect measurements are presented. Also discussed is the problem of reactant decomposition. (Author)
Descriptors : *Semiconducting films, *Crystal growth, Low temperature, Thin films, Vapor deposition, Electron diffraction, Decomposition, Crystal structure, Electrical properties, Oxygen, Gallium compounds, Nitrides
Subject Categories : Physical Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE