Accession Number : AD0778811

Title :   Transient Radiation Effects.

Descriptive Note : Interim summary rept. 11 Jun-31 Dec 73,

Corporate Author : INTELCOM RAD TECH SAN DIEGO CALIF

Personal Author(s) : Berger,Robert A. ; Colwell,Joseph F. ; Fisher,Chris J. ; Flanagan,Terry M. ; Green,Barry A.

Report Date : 30 NOV 1973

Pagination or Media Count : 77

Abstract : ;Contents: Displacement damage in compound semiconductors; Transient conductivity in counterdoped silicon; Contacts; Charge transport and trapping in MOS structures; Measurement of charge-carrier lifetimes; Charge storage in polymeric insulators.

Descriptors :   *TRANSIENT RADIATION EFFECTS, *SEMICONDUCTORS, *INSULATION, GALLIUM ARSENIDES, ELECTRON IRRADIATION, FISSION NEUTRONS, SILICON, ELECTRICAL CONDUCTIVITY, METAL OXIDE SEMICONDUCTORS, CHARGE CARRIERS, ELECTRIC CONTACTS, POLYMERS, CAPACITORS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE