Accession Number : AD0779011

Title :   1.06 Micron Intensified Silicon Target TV Camera Tube.

Descriptive Note : Final rept. 7 May 71-7 Jan 74,


Personal Author(s) : Martinelli,Ramon U. ; Schultz,Melvin L. ; Ettenberg,Michael ; Hughes,Frederick R. ; Butterwick,Gilbert N.

Report Date : APR 1974

Pagination or Media Count : 107

Abstract : The objective of this contract was the fabrication and testing of negative electron affinity (NEA) II-V transmission secondary emission (TSE) dynodes which are to be incorporated into a silicon intensifier tube. The photocathode is to be an NEA GaAs semitransparent cathode. A reliable technique for fabricating GaAs dynodes has been developed which employs a combination of chemical and electromechanical etching. Uniformly thin smooth 0.5- to 0.8-cm diameter TSE dynodes 2 to 10 micrometers thick have been made. TSE gains of 2 to 20 have been observed in the 5- to 8-keV primary energy range for flat-band GaAs TSE dynodes. The low gains at these energies are the direct result of very high surface recombination velocities at the inactive surface. Seven image tubes have been built: five proximity-focused image intensifier tubes and two SIT tubes with a GaAs photocathode and a GaAs TSE dynode. The design and fabrication of each of these tubes are discussed. (Author)

Descriptors :   *Television cameras, *Camera tubes, *Electron tube targets, *Image intensifiers(Electronics), *Dynodes, Fabrication, Epitaxial growth, Gallium arsenides, Silicon

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE