Accession Number : AD0779241

Title :   Hysteresis Effects in the Semiconductor - Metal Transition of Cr-Doped VO2,

Corporate Author : QUEEN'S UNIV KINGSTON (ONTARIO) DEPT OF PHYSICS

Personal Author(s) : Reyes,J. M. ; Marko,J. R. ; Sayer,M.

Report Date : 25 JUL 1973

Pagination or Media Count : 6

Abstract : The termal hysteresis of the semiconductor to metal transition V(1-x)Cr(x)O2 with 0< or = x < or = 0.023 was found to increase with x because of a corresponding rise in the heating transition temperature. No significant change was observed in the temperature associated with the cooling transition. A qualitative explanation is offered for these results on the basis of an assumed relationship between the free energy and a lattice distortion parameter. (Author)

Descriptors :   *Semiconductors, *Phase transformations, Thermophysical properties, Vanadium compounds, Dioxides, Doping, Chromium, Transition temperature, Free energy, Hysteresis, Canada

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE