Accession Number : AD0779314

Title :   Photoluminescence from Irradiation-Induced Defects in Silicon,

Corporate Author : ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s) : Noonan,John Robert

Report Date : APR 1974

Pagination or Media Count : 181

Abstract : New information concerning the identification of radiative defects in Si is provided by three sets of experiments which study the photoluminescence from Si irradiated with electrons at low temperature (100K), Si subjected to ion implantations, and electron irradiations of Al and Ga doped Si. (Modified author abstract)

Descriptors :   *SILICON, *DEFECTS(MATERIALS), *PHOTOLUMINESCENCE, RADIATION EFFECTS, ELECTRON IRRADIATION, ION IMPLANTATION, IMPURITIES, ALUMINUM, GALLIUM, THESES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE