Accession Number : AD0779472

Title :   GaAs Large Optical Cavity (LOC) Laser Diode for Communications Systems.

Descriptive Note : Interim technical rept. no. 2, 16 May-15 Nov 73,


Personal Author(s) : O'Brien,J. T.

Report Date : MAR 1974

Pagination or Media Count : 58

Abstract : Work has continued on the development of a LOC double heterojunction laser diode to be used as the transmitting component for an optical communicator. A thermal analysis of the LOC diode, mounted in the microwave package, is given along with measurements of the total device inductance. A new epitaxial system has been constructed which incorporates an all-electronic temperature control and programming system. Results of both four and five layer epitaxial junctions are discussed. Pulse driver developments and performance characteristics of the laser devices are given at duty cycles up to 3% at pulse repetition frequencies in excess of 2.5 MHz. Work has been initiated on the construction of a two position life test rack capable of operating the LOC laser diodes at currents up to 15 amperes and pulse repetition rates of 5.0 MHz at 10 nanoseconds pulse width. (Author)

Descriptors :   *Semiconductor diodes, *Gallium arsenide lasers, Light emitting diodes, Communication equipment, Packaging, Thermal resistance, Laser materials, Performance(Engineering)

Subject Categories : Lasers and Masers
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE