Accession Number : AD0779921
Title : II-VI and III-V Heterostructures for Opto-Electronic Applications.
Descriptive Note : Final rept. 1 May-31 Oct 73,
Corporate Author : ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CALIF SCIENCE CENTER
Personal Author(s) : Lim,Teong C.
Report Date : FEB 1974
Pagination or Media Count : 32
Abstract : The initial work of Yim and Stofko demonstrated that good quality epitaxial films of ZnS and ZnSe could be achieved by chemical vapor phase deposition (CVD). The purpose of this work is to conduct further exploratory research using CVD aimed at elucidating optimum growth and doping conditions with the goal of producing controlled dopant characteristics. Results on dopants such as Cu, Ga, and Al are presented. It is found that in order to achieve routinely a low resistivity (rho < one ohm-cm) of n-type ZnSe film, the gallium-to-zinc ratio has to be about 25%. Such a result has never been previously obtained in open-tube vapor-phase-epitaxy. These films were grown on highly-insulating ZnSe substrates, p+-GaAs, and p-GaAs substrates. Preliminary results on graded heterostructures of InAs(1-x)P(x) for lightemitting or detector applications are also discussed. (Modified author abstract)
Descriptors : *Semiconducting films, *Epitaxial growth, Zinc sulfides, Zinc selenides, Indium phosphides, Arsenides, Doping, Electrooptics, Vapor deposition, Photodiodes
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE