Accession Number : AD0780160
Title : Theoretical and Experimental Studies of Semiconductor Device Degradation Due to High Power Electrical Transients.
Descriptive Note : Final technical rept. 6 Mar 72-31 Dec 73,
Corporate Author : GENERAL ELECTRIC CO PHILADELPHIA PA SPACE DIV
Personal Author(s) : Tasca,Dante M. ; Peden,Joseph C. ; Andrews,John L.
Report Date : DEC 1973
Pagination or Media Count : 129
Abstract : The report presents the results of a study to determine the modes and mechanisms of semiconductor component degradation and failure resulting from high electrical stress transient inputs. Principal areas of investigation were the detailed characterization of such degradation and failure mechanisms in selected discrete, bipolar and unipolar devices and integrated circuits when stressed with high current transients in the nanosecond to microsecond time regime and to investigate the correlation of component failure with non-destructive parameter measurements. A major area of interest was to experimentally show the utility of square wave pulsed-power damage testing in the prediction of semiconductor device response for complex power waveforms typical of electromagnetic pulse (EMP) induced transients, and to develop basic analytical techniques for prediction of complex power waveform response using square wave response data.
Descriptors : *Semiconductor devices, *Transient radiation effects, Electromagnetic pulses, Damage assessment, Semiconductor diodes, Transistors, Microcircuits, Metal oxide semiconductors, Failure(Electronics), Waveforms, Mathematical models
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE