Accession Number : AD0780186
Title : Radiation Effects of MOS Gate Insulators.
Descriptive Note : Final rept. Jul-Dec 73,
Corporate Author : LEHIGH UNIV BETHLEHEM PA
Personal Author(s) : Fowkes,Frederick M. ; Kahlke,Walter E. ; Butler,Sidney R.
Report Date : JAN 1974
Pagination or Media Count : 45
Abstract : Impurity metal ions (sodium, aluminum, chromium, and gold) were diffused (and grown) into oxide films on silicon which were then exposed to 1,000,000 rads of ionizing radiation from a cobalt-60 source. The effects of radiation were observed by chemical analysis (to determine ion transport) and by conductance and capacitance measurements (to determine oxide charge and distribution of surface state density). (Modified author abstract)
Descriptors : *Metal oxide semiconductors, *Radiation effects, Films, Gates(Circuits), Radiation hardening, Oxides, Ions, Impurities, Transport properties, Silicon dioxide, Silicon, Sodium, Aluminum, Chromium, Gold, Gamma rays
Subject Categories : Electrical and Electronic Equipment
Radioactiv, Radioactive Wastes & Fission Prod
Distribution Statement : APPROVED FOR PUBLIC RELEASE