Accession Number : AD0780536
Title : Susceptibility of UHF RF Transistors to High Power UHF Signals.
Descriptive Note : Interim rept. Jul 72-Jun 73,
Corporate Author : STATE UNIV OF NEW YORK BUFFALO
Personal Author(s) : Hewitt,Hollis J. ; Whalen,James J.
Report Date : MAY 1974
Pagination or Media Count : 61
Abstract : The report describes a program that was initiated to determine what effects high power UHF/microwave signals have upon solid state components such as transistors used in RF amplifier stages of UHF/microwave receivers. The effects of CW power at 200 MHz upon the following transistor parameters were monitored: (1) small signal power gain; (2) noise figure; (3) breakdown voltages; (4) leakage currents; (5) Beta (hFE). The one parameter that did degrade significantly when CW UHF power was applied was the dc current gain Beta. A change in Beta from an initial value of 60 to a value of 15 after exposure is a representative case. These changes in Beta occur at incident power levels significantly below that required to cause component failure. The parameter Beta is a good parameter to monitor during CW EMV investigations. (Modified author abstract)
Descriptors : *Transistors, Radiation effects, Ultrahigh frequency, High power, Microwaves, Continuous waves, Bipolar transistors, Silicon, Electromagnetic radiation, Vulnerability
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE