Accession Number : AD0780702

Title :   Millimeter Wave Avalanche Transit Time Diode Amplifier.

Descriptive Note : Quarterly repts. 1/2, 1 Jul-31 Dec 72,

Corporate Author : RAYTHEON CO WALTHAM MASS SPECIAL MICROWAVE DEVICES OPERATION

Personal Author(s) : Chen,Wen C. ; Sims,Leslie H.

Report Date : MAY 1974

Pagination or Media Count : 40

Abstract : Preliminary flip-chip diodes were fabricated, and several wafers of GaAs epitaxial material were chosen for further diode development work. In addition to the diode effort, initial plans were made on the design of the avalanche diode amplifier. The approach chosen was a 3 stage ADA which assumed that the required circulator design and fabrication would be done in house in order to meet the overall amplifier requirements. During the second quarter, all of the effort was concentrated on the evaluation of GaAs epi material for its IMPATT diode potential. 50% of the initial 28 crystal wafers were found to be suitable for millimeter wave avalanche transit time diode fabrication. In order to reduce the parasitics and to increase the power handling capability of the diode the major portion of the effort concentrated on the fabrication of plated heat sink (PHS) type millimeter wave IMPATT diodes. Nine wafers were recommended for PHS diode fabrication. (Modified author abstract)

Descriptors :   *Microwave amplifiers, *Millimeter waves, Avalanche diodes, IMPATT diodes, Gallium arsenides, Fabrication, K band, Heat sinks, Semiconductor devices

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE