Accession Number : AD0781155

Title :   Influence of Built-In Field Heterogeneity on Semiconductor Pickup Efficiency,

Corporate Author : ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA

Personal Author(s) : Evdokimov,V. M. ; Milovanov,A. F.

Report Date : 20 MAR 1974

Pagination or Media Count : 20

Abstract : The optimal curvature of the potential of the built-in field of a planar photocell with p-type doped layer n-type base and its effect on the efficiency of doped layer pickup are examined. The photocell is illuminated on the doped layer side. The pickup efficiency maximum was found to depend on the surface recombination rate. In some field configurations the photocell is less sensitive to the rate of surface recombination. The gain in pickup of carriers generated with shortwave radiation, for a particular field configuration, is approximately 50%. (Author)

Descriptors :   *Photoelectric cells(Semiconductor), Efficiency, Photoconductivity, Semiconductor junctions, Photosensitivity, Translations, USSR

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE