Accession Number : AD0781292

Title :   Growth and Investigation of Hexagonal Boron Nitride.

Descriptive Note : Final technical rept. 1 Mar 73-31 Mar 74,

Corporate Author : VARIAN ASSOCIATES PALO ALTO CALIF

Personal Author(s) : Yep,T. O.

Report Date : APR 1974

Pagination or Media Count : 14

Abstract : BN films have been chemically vapor deposited on various substrates. Ordered polycrystalline films are obtained on the (5,-6,1) Si substrate. A transit-charge-technique apparatus for the direct measurement of the carrier-drift velocity has been constructed and tested with drift-velocity measurements in Si. As yet, drift-velocity measurements on the BN films have not been successful. (Author)

Descriptors :   *Semiconducting films, *Boron nitrides, *Crystal growth, Thin films, Substrates, Silicon, Polycrystalline, Electron transport

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE