Accession Number : AD0781331

Title :   Low Temperature Irradiation Effects in SiO2 Insulated MIS Devices.

Descriptive Note : Technical rept.,

Corporate Author : PRINCETON UNIV N J SOLID STATE AND MATERIALS LAB

Personal Author(s) : Harari,E. ; Wang,S. ; Royce,B. S. H.

Report Date : 15 MAY 1974

Pagination or Media Count : 29

Abstract : The storage of positive charge in the SiO2 insulator of MIS devices has been studied at both 300 and 80K. It was found that the additional charge stored in the oxide as a result of low temperature X-irradiation behaves quite differently from that induced by room temperature irradiation. This additional charge may be removed from the oxide by photodepopulation techniques, by field emission and by thermal annealing. The charge associated with traps stable at room temperature is shown to be insensitive to these treatments under the same experimental conditions. The experimental data indicate that the observed behavior is not due to positive ion transport within the oxide and strongly indicates that hole transport is occurring. Models for the trapping sites and the role of surface states are discussed. (Author)

Descriptors :   *Charge coupled devices, *Semiconductor devices, *Metal oxide semiconductors, Irradiation, Radiation effects, Silicon dioxide, Cryogenics, Temperature, X rays, Thermal properties, Response, Holes(Electron deficiencies), Trapping(Charged particles), Attenuation, Electric charge, Annealing, Field emission

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE