Accession Number : AD0781832

Title :   Characteristics of SiO2 Films Grown in an HcL Purged Environment.

Descriptive Note : Master thesis,

Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s) : Hoffmeister,Richard Randol

Report Date : JUN 1974

Pagination or Media Count : 114

Abstract : The major purpose of the research is to study how the addition of HCl affects the characteristics of oxides typically used in integrated circuit manufacture. HCl was used in two ways: an HCl/O2 mixture was used to clean the oxidation tube prior to oxidation, and an HCl/O2 mixture was used in an in situ process. The oxide parameters having a significant impact on device performance were identified and measured by using both C-V and I-V techniques. An HCl distribution system was constructed and used with a conventional oxidation furnace. Negligible trapping of sodium ions at the Si-SiO2 interface was observed for oxides grown in an HCl cleaned tube and conventional oxides, while strong trapping of the ions was observed when HCl was used in situ. (Modified author abstract)

Descriptors :   *Integrated Circuits, *Metal oxide semiconductors, *Dielectric films, *Silicon dioxide, *Hydrogen chloride, Manufacturing, Sodium, Impurities, Computer programs, Theses

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE