Accession Number : AD0781919

Title :   High Density Memory.

Descriptive Note : Final rept. Apr 72-Dec 73,

Corporate Author : MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Lin,H. C. ; Chawla,A. S.

Report Date : 1973

Pagination or Media Count : 69

Abstract : A study was made of programmable non-volatile metal nitride oxide silicon (MNOS) memory. The work included: Setting up of MNOS processing; evaluation and characterization of MNOS devices; design of memory integrated circuits; and, fabrication of memory integrated circuits.

Descriptors :   *Memory devices, High density, Transistors, Metals, Nitrides, Oxides, Silicon, Capacitors, Integrated circuits, Fabrication, Read write memories, Semiconductor devices

Subject Categories : Computer Hardware

Distribution Statement : APPROVED FOR PUBLIC RELEASE