Accession Number : AD0781919
Title : High Density Memory.
Descriptive Note : Final rept. Apr 72-Dec 73,
Corporate Author : MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Lin,H. C. ; Chawla,A. S.
Report Date : 1973
Pagination or Media Count : 69
Abstract : A study was made of programmable non-volatile metal nitride oxide silicon (MNOS) memory. The work included: Setting up of MNOS processing; evaluation and characterization of MNOS devices; design of memory integrated circuits; and, fabrication of memory integrated circuits.
Descriptors : *Memory devices, High density, Transistors, Metals, Nitrides, Oxides, Silicon, Capacitors, Integrated circuits, Fabrication, Read write memories, Semiconductor devices
Subject Categories : Computer Hardware
Distribution Statement : APPROVED FOR PUBLIC RELEASE