Accession Number : AD0782254

Title :   Solid State X-Band Driver.

Descriptive Note : Final rept. 1 Jan 72-31 Jul 73,

Corporate Author : RAYTHEON CO WALTHAM MASS SPECIAL MICROWAVE DEVICES OPERATION

Personal Author(s) : Tsai,W. C.

Report Date : 19 SEP 1973

Pagination or Media Count : 72

Abstract : Four exploratory developmental x-band avalanche diode amplifiers were constructed. The amplifier delivers 5 Watts output power with 10 to 15 dB of gain across the frequency range of 7.9 to 8.4 GHz. The RF swept gain versus frequency data for all four units is included. The maximum amplifier efficiency observed is 7%. The phase linearity curve was measured for one unit and the data is included. The method of approach as well as the design and fabrication procedures are described. (Modified author abstract)

Descriptors :   *Microwave amplifiers, Schottky barrier devices, Avalanche diodes, Power amplifiers, Satellite communications, X band, Signal processing, Integrated circuits, Bias, Gallium arsenides

Subject Categories : Electrical and Electronic Equipment
      Radio Communications

Distribution Statement : APPROVED FOR PUBLIC RELEASE