Accession Number : AD0782255

Title :   Long Term Memory in Junction Devices Using Multivalent Trapping Impurities in Silicon.

Descriptive Note : Semiannual rept. no. 1, 1 Jul 73-28 Feb 74,

Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Holm-Kennedy,J. W.

Report Date : JUN 1974

Pagination or Media Count : 47

Abstract : The purpose of the project is to study the effect of multivalent trapping on long term memory in junction devices. In the course of the field induced trapping (F.I.T.) nonvolatile switching investigations, three new types of behavior have been observed: Irreversible switching in n-Si epitaxial structures doped with Cu, apparently due to a conductive filament formation; reversible switching of a character different than normally observed in F.I.T. devices; and, large magnitude oscillations (KHz) in Schottky diodes under large forward bias (35 volts). Further, a new electronic instrument, an automated pulse potentiometer, has been designed constructed and tested under high voltage conditions.

Descriptors :   *Silicon, Schottky barrier devices, Bipolar transistors, Epitaxial growth, Plotters, Copper, Impurities, Semiconductor diodes, Potentiometers, Space charge

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE