Accession Number : AD0782285

Title :   Transient Surface Damage.

Descriptive Note : Final technical rept. 1 Dec 72-31 Dec 73,

Corporate Author : RESEARCH TRIANGLE INST DURHAM N C

Personal Author(s) : Simons,Mayrant

Report Date : JAN 1974

Pagination or Media Count : 93

Abstract : The report describes the results of a study of transient surface damage phenomena in contemporary MOS and CMOS devices following pulsed radiation exposure. Measurements made on individual N- and P-channel transistor structures between 0.0001 sec and 1000 sec after irradiation show that there are widespread variations in radiation sensitivity and space charge annealing behavior among samples prepared by different processes and by different manufacturers. Response data for devices fabricated on bulk silicon and silicon-on-sapphire (SOS) substrates and for various SiO2 and Al2O3 gate insulators are compared and discussed. The effects of radiation-induced charge in the sapphire substrate of an SOS device are explored. (Author)

Descriptors :   *Metal oxide semiconductors, *Radiation effects, *Transient radiation effects, Surface properties, Silicon dioxide, Field effect transistors, Electron irradiation, Silicon, Annealing, Sapphire, Space charge

Subject Categories : Electrical and Electronic Equipment
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE