Accession Number : AD0782309

Title :   Electrical and Optical Studies of Deep Impurities in Semiconductors.

Descriptive Note : Final scientific rept. 1 Feb 72-30 Apr 74,

Corporate Author : FLORIDA ATLANTIC UNIV BOCA RATON DEPT OF PHYSICS

Personal Author(s) : Blakemore,John S.

Report Date : MAY 1974

Pagination or Media Count : 13

Abstract : ;Contents: Ionization energy, impurity conduction and magnetoresistance in GaAs doped with Mn; Photo-ionization of Mn acceptors in GaAs; Deduction of impurity state functions from photo-ionization properties; Free hole scattering by 'deep' neutral acceptors; Hole capture cross-section of Hg(-) acceptors in Ge; Magnetophonon effect.

Descriptors :   *Semiconductors, *Gallium arsenides, *Impurities, Electrical conductivity, Manganese, Photoionization, Germanium, Mercury, Infrared detectors, Doping, Indium antimonides, Tellurium, Phonons

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE