Accession Number : AD0782980

Title :   Moat-Etched Two-Phase Charge-Coupled Devices,

Corporate Author : TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Gelberger,P. P. ; Salama,C. A. T.

Report Date : 20 AUG 1973

Pagination or Media Count : 9

Abstract : A novel technique for fabricating two-phase charge-coupled devices is described. The structure requires only thermally grown SiO2 and makes use of moats etched into the silicon which in conjunction with a single layer metallization achieve small interelectrode spacings and directionality of charge transport. The feasibility of the technique is demonstrated experimentally. The devices fabricated were successfully operated as both digital and analog shift registers. The method described offers certain advantages in ease of fabrication and reliability along with the capability for high speed operation. (Author)

Descriptors :   *Charge coupled devices, Fabrication, Etching, Silicon, Silicon dioxide, Metal oxide semiconductors, Canada

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE