Accession Number : AD0783341
Title : Acoustic Emission and the Semiconductor: Metal Transition in Vanadium Dioxide Thin Films,
Corporate Author : ROYAL MILITARY COLL OF CANADA KINGSTON (ONTARIO)
Personal Author(s) : McBride,S. L. ; Hutchison,T. S. ; Murphy,R.
Report Date : 25 FEB 1974
Pagination or Media Count : 7
Abstract : The electrical resistance of the VO2 film was measured concurrently with the acoustic emissions using the four-lead method. The data show all the main features observed during several hundred cycles of the sample through the transition temperature range. Little variation in the behaviour was observed provided the thermal history of the sample was not irregular. The temperature was cycled between 50C and 90C.
Descriptors : *Acoustic emissions, *Semiconducting films, Vanadium compounds, Electrical resistance, Dioxides, Canada
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE