Accession Number : AD0783360

Title :   Bipolar Medium-Scale Integrated Circuit Hardening. Volume I. Phase I.

Descriptive Note : Final rept. 1 Jan-30 Sep 73,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Personal Author(s) : Stehlin,R. A. ; DeVries,Dale ; Bean,Ken ; Hoffman,Joe ; Robbins,Carl

Report Date : APR 1974

Pagination or Media Count : 161

Abstract : The results of the shallow device fabrication indicate that low-power Schottky circuitry can be fabricated with full fan-out up to 10 to the 15th power neutron/sq cm. Three profiles have been identified that use an arsenic emitter and a shallow base junction. Ion implantation is used to a high degree. A multilevel metal system with compatible SiCr thin-film resistors has been demonstrated. The improved dielectric effort did not result in a feasible process for this program, but it did demonstrate several fabrication processes that can lead to an improved dielectric process. (Author)

Descriptors :   *INTEGRATED CIRCUITS, *RADIATION HARDENING, BIPOLAR TRANSISTORS, ION IMPLANTATION, DOPING, RESISTORS, THIN FILMS, METALLIZING, DIELECTRICS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE