Accession Number : AD0783988

Title :   Investigation of Chromium-Doped Oxides.

Descriptive Note : Final rept. 1 Nov 71-1 Nov 73,

Corporate Author : ROCKWELL INTERNATIONAL CORP ANAHEIM CALIF ELECTRONICS RESEARCH DIV

Personal Author(s) : Kjar,Raymond A.

Report Date : NOV 1973

Pagination or Media Count : 155

Abstract : Part I of the report describes results obtained during the investigation of the mechanisms by which chromium-doping of a silicon-dioxide gate insulator may improve the radiation resistance of MOS devices. Part II details the fabrication and testing of a CMOS/SOS 4-bit adder that employed chrome-doped and aluminum ion-implanted gate oxides to provide improved radiation hardness.

Descriptors :   *Metal oxide semiconductors, *Integrated circuits, *Radiation hardening, Gates(Circuits), Silicon dioxide, Semiconductor devices, Chromium, Doping, Silicon, Sapphire, Radiation resistance, Aluminum, Ion implantation

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE