Accession Number : AD0784206

Title :   III-V Surface Studies.

Descriptive Note : Interim technical rept. no. 1, 1 Nov 73-31 Jan 74,

Corporate Author : RCA LABS PRINCETON N J

Personal Author(s) : Goldstein,Bernard

Report Date : FEB 1974

Pagination or Media Count : 37

Abstract : The authors have studied the structural and chemical state of the GaAs surface and have been able to characterize this surface at various stages during activation to a state of Negative Electron Affinity which is produced by the adsorption of cesium and oxygen. The LEED-Auger properties, the cesium and oxygen interactions, and the photoemissive characteristics have been studied as a function of temperature from -170 to 600C. An atomic model for the NEA GaAs/Cs/O surface is discussed. Studies have begun of the Ga/In/As ternary system in order to extend the photoemissive response into the 1- to 2-micrometer region. Plans have been developed for the systematic study of compound semiconductor surface structures in terms of differences in atomic radii and electronegativity between the constituent III-V atoms. (Modified author abstract)

Descriptors :   *Gallium arsenides, *Surface chemistry, *Photoelectric emission, Surfaces, Semiconductors, Auger electron spectroscopy, Temperature, Laboratory equipment, Indium compounds, Adsorption, Cesium, Experimental design

Subject Categories : Radiation and Nuclear Chemistry
      Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE