Accession Number : AD0784296

Title :   Laser Studies in In(1-x)Ga(x)P, InAs(x)P(1-x), In(x)Ga(1-x)As and Related III-V Compounds.

Descriptive Note : Final rept. 10 Nov 71-9 Apr 74,

Corporate Author : ILLINOIS UNIV URBANA MATERIALS RESEARCH LAB

Personal Author(s) : Holonyak,N. , Jr

Report Date : MAY 1974

Pagination or Media Count : 108

Abstract : Constant-temperature liquid phase epitaxy (CT-LPE) has been used to synthesize laser-quality In(x)Ga(1-x)As, In(1-x)As(x)P, In(1-x)Ga(x)P, and In(1-x)Ga(x)As(y)P(1-y). Zinc-diffused junctions in CT-LPE InGaAs operate (pulsed) to temperatures as high as 265K, and with further development would operate perhaps to 300K. The sequential CT-LPE growth of an n-type layer of In(1-x)Ga(x)P (x approximately = 0.63), on a lattice-matched GaAs(1-y)P(y) (y approximately = 0.25) substrate, followed by the growth of a similar p-type layer has provided the first junction laser to operate in the yellow (about 5900A). The structure approximates in behavior a single heterojunction, and if duplicated in InGaAs, would doubtless lead to a 300K laser at about one micrometer or longer wavelength. Most of this work is described in detail in a series of appendices as well as various detailed features of InGaP. Also described is a plasma electron beam device for exciting laser operation in homogeneous samples. (Modified author abstract)

Descriptors :   *Semiconductor lasers, *Laser materials, *Infrared lasers, Epitaxial growth, Indium phosphides, Gallium phosphides, Gallium arsenides, Electron beams, Arsenides, Photoluminescence

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE