Accession Number : AD0784341

Title :   GaAs Large Optical Cavity (LOC) Laser Diode for Communications Receivers.

Descriptive Note : Final technical rept. 16 Nov 72-20 Mar 74,


Personal Author(s) : O'Brien,James T.

Report Date : JUL 1974

Pagination or Media Count : 75

Abstract : Work has been completed on the development of a LOC double heterojunction laser diode for use as the transmitting component for an optical communicator. A thermal analysis of the LOC diode, mounted in the microwave package, is presented along with measurements of the total device inductance. A new epitaxial system was constructed which incorporates an all-electronic temperature control and programming system. Results of both four and five layer epitaxial junctions are discussed. Pulse driver developments and performance characteristics of the laser devices are given at duty cycles in excess of 5% at pulse repetition frequencies up to 5.0 MHz. A two position life test rack was constructed for the purpose of operating the LOC laser diodes at currents up to 15 amperes and pulse repetition rate of 5.0 MHz at 10 nanosecond pulse width. Some preliminary life test data is presented along with recommendations for extending the performance of the device. (Author)

Descriptors :   *Semiconductor diodes, Laser cavities, Lasers, Gallium arsenides, Gallium arsenide lasers, Receivers, Laser communications, Thermal analysis

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers
      Non-radio Communications

Distribution Statement : APPROVED FOR PUBLIC RELEASE