Accession Number : AD0784342

Title :   III-V Surface Studies.

Descriptive Note : Interim technical rept. no. 2, 1 Feb-30 Apr 74,

Corporate Author : RCA LABS PRINCETON N J

Personal Author(s) : Goldstein,Bernard

Report Date : MAY 1974

Pagination or Media Count : 20

Abstract : Work during this quarter centered on the surface properties of GaInAs(100); most of the measurements were made on samples containing 40% In and 63% In. In general the LEED-Auger behavior is the same as that found for GaAs. The highest white light photoemissive efficiencies (at room temperature) are reported. Threshold measurements indicate that in neither case is negative electron affinity (NEA) achieved, although the photoemission shows that the vacuum level has been considerably lowered. The temperature dependence of the photoemission is discussed. The surprising preferential desorption of In from GaInAs, reported earlier by Auger measurements, has been confirmed by Quadrupole Mass Analysis of the desorption products as a function of temperature. (Modified author abstract)

Descriptors :   *Surface chemistry, Adsorption, Cesium, Photoelectric emission, Auger electron spectroscopy, Indium compounds, Gallium arsenides, Semiconductors, Temperature, Desorption

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE