Accession Number : AD0784666
Title : Electron Beam Semiconductor S-Band Amplifier.
Descriptive Note : Triannual rept. no. 4, 1 Jul 73-31 Jan 74,
Corporate Author : WATKINS-JOHNSON CO PALO ALTO CALIF
Personal Author(s) : Roberts,L. A.
Report Date : AUG 1974
Pagination or Media Count : 34
Abstract : During the period, six diodes were placed on life test and successfully passed the required 1000 hours of operation with stable reverse breakdown voltage characteristics. Two operating S-band tubes were built and tested at 3 GHz. These tubes used pencil electron beams, mailbox helix deflection structures, and targets composed of diodes working into radial line resonators. Peak power output of 20.4 watts was achieved at a duty factor of 0.001. (Author)
Descriptors : *Microwave amplifiers, S band, Semiconductor diodes, Electron tube targets, Electron guns, Hybrid systems, Solid state electronics, Life tests
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE