Accession Number : AD0784666

Title :   Electron Beam Semiconductor S-Band Amplifier.

Descriptive Note : Triannual rept. no. 4, 1 Jul 73-31 Jan 74,

Corporate Author : WATKINS-JOHNSON CO PALO ALTO CALIF

Personal Author(s) : Roberts,L. A.

Report Date : AUG 1974

Pagination or Media Count : 34

Abstract : During the period, six diodes were placed on life test and successfully passed the required 1000 hours of operation with stable reverse breakdown voltage characteristics. Two operating S-band tubes were built and tested at 3 GHz. These tubes used pencil electron beams, mailbox helix deflection structures, and targets composed of diodes working into radial line resonators. Peak power output of 20.4 watts was achieved at a duty factor of 0.001. (Author)

Descriptors :   *Microwave amplifiers, S band, Semiconductor diodes, Electron tube targets, Electron guns, Hybrid systems, Solid state electronics, Life tests

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE