Accession Number : AD0784859

Title :   Transport Mechanisms in Liquid Phase Epitaxial Growth of Gallium Arsenide.

Descriptive Note : Technical rept. 1970-73,

Corporate Author : CORNELL UNIV ITHACA N Y

Personal Author(s) : Long,Stephen Ingalls

Report Date : JUN 1974

Pagination or Media Count : 245

Abstract : The influence of solute transport mechanisms on growth rates, thickness uniformity, and surface morphology of liquid phase epitaxially grown layers was studied theoretically and experimentally. Steady state diffusion theory was developed to relate temperature gradients, growth temperatures and substrate location to observed growth rates. A vertical steady-state epitaxy system was constructed which uses cylindrical symmetry to achieve good thermal uniformity. A numerical technique was used to calculate temperature distributions in cylindrical graphite boats. The heat conduction equation is solved both with fixed temperature and radiation heat transfer boundary conditions. Good agreement with measured temperature data has been obtained. (Modified author abstract)

Descriptors :   *Gallium arsenides, *Epitaxial growth, *Transport properties, Diffusion, Films, Thickness, Supercooling, Liquid phases, Semiconductors

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE