Accession Number : AD0784877
Title : Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide,
Corporate Author : CALIFORNIA INST OF TECH PASADENA DIV OF ENGINEERING AND APPLIED SCIENCE
Personal Author(s) : Pashley,Richard D.
Report Date : JAN 1974
Pagination or Media Count : 123
Abstract : Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Descriptors : *Silicon, *Gallium arsenides, *Ion implantation, Hall effect, Doping, Indium, Tellurium, Semiconductor devices, Fabrication, Energy levels, Electrical properties, Silicon nitrides, Aluminum compounds, Nitrides, Encapsulation, Theses
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE