Accession Number : AD0784877

Title :   Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide,

Corporate Author : CALIFORNIA INST OF TECH PASADENA DIV OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Pashley,Richard D.

Report Date : JAN 1974

Pagination or Media Count : 123

Abstract : Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.

Descriptors :   *Silicon, *Gallium arsenides, *Ion implantation, Hall effect, Doping, Indium, Tellurium, Semiconductor devices, Fabrication, Energy levels, Electrical properties, Silicon nitrides, Aluminum compounds, Nitrides, Encapsulation, Theses

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE