Accession Number : AD0785078
Title : Electrical Conduction through Thermal and Anodic Oxides of Indium Antimonide,
Corporate Author : COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
Personal Author(s) : Chan,Y. K. ; Wilmsen,C. W. ; Vasbinder,G. C.
Report Date : 15 AUG 1974
Pagination or Media Count : 18
Abstract : Metal-insulator-semiconductor (MIS) devices formed with InSb are finding application as infrared image converters and detectors and as a voltage controlled surface wave delay line. These MIS devices require a stable insulating layer with high resistance and breakdown strength. This investigation has been conducted in order to better evaluate the oxide as a possible insulator for InSb MIS devices. The characteristics of current flow through thermally and anodically grown oxides of vapor deposited and bulk InSb are reported. The thermally grown oxides have low resistance similar to In2O3, but the anodic oxides are insulating and the current flow is characteristic of Schottky emission.
Descriptors : *Indium antimonides, *Infrared detectors, *Electrical conductivity, Oxides, Schottky barrier devices, Indium compounds, Antimony compounds, Electrical insulation, Semiconductor devices
Subject Categories : Infrared Detection and Detectors
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE