Accession Number : AD0785082

Title :   Analysis of Physical Parameters in Electron-Beam-Irradiated Semiconductor Diodes.

Descriptive Note : Interim rept.,


Personal Author(s) : Haas,George A.

Report Date : 31 MAR 1972

Pagination or Media Count : 32

Abstract : The basic interaction theory of parameters such as thickness, impurity density, area, and external supply voltage required for various power-frequency applications is discussed for multiple electron-beam-irradiated semiconductor diodes connected in series. Two general approaches are outlined for use in CW class-B applications: (1) a minimum-thickness approach for reducing the transit-time limitations for a tuned-output high-frequency type of operation, and (2) a minimum-area approach for reducing the diode capacitance, as is desired for wide-bandwidth applications. Guidelines are also provided for changing the design conditions by altering constraints such as maximum allowed electric field, minimum allowed electric field, and heat dissipation. The power-frequency capabilities of the device are discussed in terms of present state-of-the-art fabrication limitations in controlling thickness, electromigration of the Al overlayer, uniformity of the electron beam, and electron-hole generation rate. (Modified author abstract)

Descriptors :   *Semiconductor diodes, Electron irradiation, Amplifiers, Broadband

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE