Accession Number : AD0785856

Title :   Annealing Studies of Al(+) Implanted SiO2 Thin Films.

Descriptive Note : Technical rept.,

Corporate Author : PRINCETON UNIV N J SOLID STATE AND MATERIALS LAB

Personal Author(s) : Wang,S. ; Russell,T. ; Royce,B. S. H.

Report Date : 30 AUG 1974

Pagination or Media Count : 26

Abstract : The trapping of charge in the amorphous SiO2 layer of metal-oxide-semiconducting devices under ionizing radiation conditions can be modified by implanting the oxide with Al(+) ions. Optical absorption, E.S.R. and MOS capacitance methods have been used to study implantation induced defects in the oxide, the associated change in oxide charge storage and the stability of the defects to post implantation thermal annealing. A simple model of negative charge storage in the implantation zone combined with positive charge storage in the interface regions has been examined. Results of this modeling are discussed. (Author)

Descriptors :   *Silicon dioxide, *Metal oxide semiconductors, Semiconductor devices, Thin films, Aluminum, Ion implantation, Annealing, Radiation effects, Dielectric films

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE