Accession Number : AD0786038

Title :   Equivalent Circuit Parameters of Microwave Power Transistors at High Injection Levels,

Corporate Author : ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA

Personal Author(s) : Nikolaevskii,I. P. ; Polevoi,V. V. ; Sorokin,E. P.

Report Date : 16 APR 1974

Pagination or Media Count : 14

Abstract : Circuit parameters are derived for a high-frequency planar drift power transistor. In determining low-signal parameters, the inductances of transistor base, emitter, and collector and the parasitic reactive elements of the measuring circuits are critical.

Descriptors :   *Junction transistors, Microwave equipment, Circuits, Translations, USSR

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE