Accession Number : AD0786419

Title :   Study of Bulk Trapping Effects in Radiation-Resistence MOS Devices.

Descriptive Note : Final rept. 30 Jun 72-31 Dec 73,

Corporate Author : CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s) : Oldham,William G.

Report Date : MAY 1974

Pagination or Media Count : 32

Abstract : The properties of MOS transistors are examined before and after exposure to large neutron fluences. The effect is concentrated on three phenomena, judged to be the most serious limitations on ultimate device hardness: (1) Trapping of carriers in radiation induced deep levels (2) degradation of the mobility of carriers in the channel, and (3) punch-through from drain to source. Data are obtained on three classes of devices (1) hardened MOS transistors manufactured by Hughes (2) MOS transistors manufactured at Siliconiz, and (3) several special vertical pnp and npn structures. (Modified author abstract)

Descriptors :   *Transistors, *Metal oxide semiconductors, *Radiation effects, Trapping(Charged particles), Charge carriers, Neutrons, Irradiation, Radiation hardening, Field effect transistors, Bipolar transistors, Space charge, Voltage, Mobility

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE