Accession Number : AD0786459

Title :   Analysis of Semiconductor Structures by Nuclear and Electrical Techniques: Silicide Formation.

Descriptive Note : Final rept. 1 Apr 73-30 Apr 74,

Corporate Author : CALIFORNIA INST OF TECH PASADENA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Bower,Robert W. ; Chu,Wei-Kan ; Krautle,Herbert ; Mayer,James W. ; Nicolet,Marc-A.

Report Date : 30 APR 1974

Pagination or Media Count : 64

Abstract : The reactions between metal layers and Si or SiO2 substrates are major considerations in choice of metallization systems for integrated circuits. Since these reactions can occur at temperatures as low as 100C, it is necessary to make the proper choice of metal layers to obtain satisfactory metal/Si contacts compatible with processing technology. In the past year (May 73 to May 74) the work at Caltech has concentrated on evaluation of silicide formation. Primary emphasis was placed on Pd, Ni and V. For some metals (Nb, V, Ti) the metal layers were deposited on SiO2 as well as Si. In this work metal layers 1000 to 4000A thick are deposited and silicide growth kinetics determined by MeV He backscattering spectrometry and phase identification by glancing angle x-ray diffraction. (Modified author abstract)

Descriptors :   *Semiconductors, *Metal films, *Silicides, *Integrated circuits, Silicon, Silicon dioxide, Palladium compounds, Nickel compounds, Vanadium compounds, Reaction kinetics, Niobium compounds, Titanium compounds, X ray diffraction, Thin films, Thermodynamics

Subject Categories : Atmospheric Physics
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE